(Hong Kong)
Product Summary
The MRF9210 is a kind of RF power field effect transistor. It is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. With the high gain and broadband performance, it is suitable for large - signal, common source amplifier applications in 26 volt base station equipment. It is characterized with series equivalent large-signal impedance parameters.
Parametrics
MRF9210 Maximum ratings: (1)Drain-Source Voltage, VDSS: 65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5 to +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 565 W; (4)Storage Temperature Range, Tstg: - 65 to +150℃; (5)Operating Junction Temperature, TJ: 200℃.
Features
MRF9210 Features: (1)Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13; Output Power: 40 Watts; Power Gain: 16.5 dB; Efficiency: 25.5%; Adjacent Channel Power: 750 kHz: -46.2 dBc @ 30 kHz BW; 1.98 MHz: -60 dBc @ 30 kHz BW; (2)Internally Matched, Controlled Q, for Ease of Use; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,; (6)40 Watts AvgN-CDMA; (7)Excellent Thermal Stability; (8)In Tape and ReelR3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF9210R5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 200W RF LDMOS NI860ML |
Data Sheet |
Negotiable |
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MRF9210R3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 200W RF LDMOS NI860ML |
Data Sheet |
Negotiable |
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