Product Summary

The MRF6S23100H is a RF Power Dield Effect Transistor. Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.


Parametrics

MRF6S23100H absolute maximum ratings:(1)drain-source voltage vdss: -0.5, +68 vdc; (2)gate-source voltage vgs: -0.5, +12 vdc; (3)total device dissipation @ tc = 25°c derate above 25°c pd: 330 w; (4)storage temperature range tstg: - 65 to +150 °c; (5)operating junction temperature tj: 200 °c; (6)cw operation cw: 100 w.

Features

MRF6S23100H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF6S23100H pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF6S23100HR3
MRF6S23100HR3

Freescale Semiconductor

Transistors RF MOSFET Power HV6 2.3GHZ 20W

Data Sheet

Negotiable 
MRF6S23100HR5
MRF6S23100HR5

Freescale Semiconductor

Transistors RF MOSFET Power HV6 2.3GHZ 20W

Data Sheet

Negotiable 
MRF6S23100HSR5
MRF6S23100HSR5

Freescale Semiconductor

Transistors RF MOSFET Power HV6 2.3GHZ 20W

Data Sheet

Negotiable 
MRF6S23100HSR3
MRF6S23100HSR3

Freescale Semiconductor

Transistors RF MOSFET Power HV6 2.3GHZ 20W

Data Sheet

Negotiable