(Hong Kong)
Product Summary
The MRF9080LR3 is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
Parametrics
MRF9080LR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation PD: 250W @ TC = 25°C;1.43W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 200 °C.
Features
MRF9080LR3 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF9080LR3 |
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Data Sheet |
Negotiable |
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Pricing (USD) |
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Negotiable |
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