(Hong Kong)
Product Summary
The MRF9200LS is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
Parametrics
MRF9200LS absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation PD: 625W @ TC = 25°C;3.6W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: -65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.
Features
MRF9200LS features: (1)Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts N CDMA Output Power; (2)Characterized with Series Equivalent Large Signal Impedance Parameters; (3)Internally Matched, Controlled Q, for Ease of Use; (4)Integrated ESD Protection; (5)Low Gold Plating Thickness on Leads, 40μ″ Nominal; (6)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF9200LSR3 |
Other |
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Data Sheet |
Negotiable |
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MRF9002R2 |
Other |
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Data Sheet |
Negotiable |
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MRF9002RS |
Other |
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Data Sheet |
Negotiable |
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MRF9011LT1 |
Other |
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Data Sheet |
Negotiable |
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MRF9030 |
Other |
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Data Sheet |
Negotiable |
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MRF9030GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 30W RF PWR FET |
Data Sheet |
Negotiable |
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MRF9030LR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 30W RF PWR FET NI-360L |
Data Sheet |
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