(Hong Kong)
Product Summary
The MRFG35030 is a gallium arsenide PHEMT RF power field effect transistor.
Parametrics
MRFG35030 absolute maximum ratings: (1)Drain-Source Voltage: 15 Vdc; (2)Total Device Dissipation @ TC = 25°C: 79 W; (3)Total Device Dissipation @ Derate above 25°C: 0.53 W/°C; (4)Gate-Source Voltage: -5 Vdc; (5)RF Input Power: 37 dBm; (6)Storage Temperature Range: -40 to +175 °C; (7)Channel Temperature: 175 °C; (8)Operating Case Temperature Range: -20 to +90 °C.
Features
MRFG35030 features: (1)Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ = 650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —12 dB; Drain Efficiency — 21%; ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth; (2)Internally Matched, Controlled Q, for Ease of Use; (3)High Gain, High Efficiency and High Linearity; (4)Excellent Thermal Stability; (5)In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRFG35030R5 |
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MOSFET RF 3550MHZ 30W 12V HF-600 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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MRFG35010NT1 |
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MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
Data Sheet |
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MRFG35010R1 |
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TRANSISTOR RF FET 3.5GHZ NI360HF |
Data Sheet |
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MRFG35010R5 |
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TRANSISTOR RF FET 3.5GHZ NI360HF |
Data Sheet |
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MRFG35030R5 |
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MOSFET RF 3550MHZ 30W 12V HF-600 |
Data Sheet |
Negotiable |
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MRFG35010NR5 |
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TRANSISTOR RF 9W 12V POWER FET |
Data Sheet |
Negotiable |
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MRFG35010MT1 |
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MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
Data Sheet |
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