Product Summary

The MRFG35030 is a gallium arsenide PHEMT RF power field effect transistor.

Parametrics

MRFG35030 absolute maximum ratings: (1)Drain-Source Voltage: 15 Vdc; (2)Total Device Dissipation @ TC = 25°C: 79 W; (3)Total Device Dissipation @ Derate above 25°C: 0.53 W/°C; (4)Gate-Source Voltage: -5 Vdc; (5)RF Input Power: 37 dBm; (6)Storage Temperature Range: -40 to +175 °C; (7)Channel Temperature: 175 °C; (8)Operating Case Temperature Range: -20 to +90 °C.

Features

MRFG35030 features: (1)Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ = 650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —12 dB; Drain Efficiency — 21%; ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth; (2)Internally Matched, Controlled Q, for Ease of Use; (3)High Gain, High Efficiency and High Linearity; (4)Excellent Thermal Stability; (5)In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Diagrams

MRFG35030 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRFG35030R5
MRFG35030R5

MOSFET RF 3550MHZ 30W 12V HF-600
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRFG35002N6AT1
MRFG35002N6AT1
Freescale Semiconductor
Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5
Data Sheet
Negotiable 
MRFG35002N6R5
MRFG35002N6R5

TRANSISTOR RF 1.5W 6V POWER FET
Data Sheet
Negotiable 
MRFG35002N6T1
MRFG35002N6T1

TRANSISTOR RF FET 3.5GHZ PLD-1.5
Data Sheet
0-1000: $3.68
MRFG35003ANR5
MRFG35003ANR5
Freescale Semiconductor
Transistors RF GaAs 3.5GHZ 3W 12V GAASPLD1.5
Data Sheet
Negotiable 
MRFG35003ANT1
MRFG35003ANT1
Freescale Semiconductor
Transistors RF GaAs 3.5GHZ 3W 12V GAASPLD1.5
Data Sheet
0-1: $7.49
1-25: $7.03
25-100: $6.73
100-500: $5.99
500-1000: $3.99
MRFG35003M6R5
MRFG35003M6R5

MOSFET RF 3.5GHZ 3W 6V 1.5-PLD
Data Sheet
0-50: $5.96