Product Summary
The MW4IC915MB is a RF LDMOS wideband integrated power amplifier.
Parametrics
MW4IC915MB absolute maximum rarings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5. +15 Vdc; (3)Storage Temperature Range Tstg: -65 to +175°C; (4)Operating Junction Temperature TJ: 175°C
Features
MW4IC915MB features: Two-Tone Common-Source Amplifier Power Gain(VDS = 26 Vdc, Pout = 15 W PEP, IDQ1 = 90 mA, IDQ2 = 240 mA,f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 =960.1 MHz) Gps: 2931dB
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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MW4IC915MBR1 |
IC PWR AMP RF 26V 15W TO-272-16 |
Data Sheet |
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Quantity | |||||||
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IC RF PWR AMP 26V 900MW 1.5-PLD |
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IC RF PWR AMP 26V 900MW 1.5-PLD |
Data Sheet |
Negotiable |
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MW4IC2020GMBR1 |
IC PWR AMP RF 26V 20W TO272-16GW |
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MW4IC2020GMBR5 |
IC PWR AMP RF 26V 20W TO272-16GW |
Data Sheet |
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MW4IC2020GNBR1 |
Freescale Semiconductor |
RF Amplifier 20W 26V EDGE |
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MW4IC2020MBR1 |
IC PWR AMP RF 26V 20W TO-272-16 |
Data Sheet |
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