Product Summary

The RA07M4047M is a 7-watt RF MOSFET Amplifier. It is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Parametrics

RA07M4047M absolute maximum ratings: (1)Drain Voltage: 9.2 V; (2)Gate Voltage: 4 V; (3)Input Power: 70 mW; (4)Output Power: 10 W; (5)Operation Case Temperature Range: -30 to +90 °C; (6)Storage Temperature Range: -40 to +110 °C.

Features

RA07M4047M features: (1)Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=7.2V, VGG=0V); (2)Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW; (3)hT>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW; (4)Broadband Frequency Range: 400-470MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 x 10 x 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

Diagrams

RA07M4047M block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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RA07M4047M
RA07M4047M
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RA07M4047MSA
RA07M4047MSA
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Data Sheet
Negotiable