Product Summary

The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The RA30H3340M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

Parametrics

RA30H3340M absolute maximum ratings: (1)VDD Drain Voltage VGG<5V: 17 V; (2)VGG Gate Voltage VDD<12.5V, Pin=0mW: 6 V; (3)Pin Input Power: 100 mW; (4)Pout Output Power: 45 W; (5)Tcase(OP) Operation Case Temperature Range: -30 to +110 ℃; (6)Tstg Storage Temperature Range: -40 to +110 ℃.

Features

RA30H3340M features: (1)Enhancement-Mode MOSFET Transistors (IDD.0 @ VDD=12.5V, VGG=0V); (2)Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 330-400MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)66 x 21 x 9.8 mm.

Diagrams

RA30H3340M block diagram

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