Product Summary

The 2N6661 is an enhancement-mode transistor that utilizes a vertical DMOS structure and Supertex well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. The typical applications of 2N6661 include: (1)Motor controls; (2)Converters; (3)Amplifiers; (4)Switches; (5)Power supply circuits; (6)Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc).

Parametrics

2N6661 absolute maximum ratings: (1)Drain-to-source voltage: 90V; (2)Drain-to-gate voltage: 90V; (3)Gate-to-source voltage: ±20V; (4)Operating and storage temperature: -55°C to +150°C.

Features

2N6661 features: (1)Free from secondary breakdown; (2)Low power drive requirement; (3)Ease of paralleling; (4)Low CISS and fast switching speeds; (5)Excellent thermal stability; (6)Integral source-drain diode; (7)High input impedance and high gain; (8)Hi-Rel processing available.

Diagrams

2N6661 pin connection 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N6661
2N6661
Supertex
MOSFET 90V 4Ohm
Data Sheet
0-1: $1.81
1-100: $1.51
100-500: $1.39
500-1000: $1.34
2N6661-2
2N6661-2
Vishay/Siliconix
MOSFET 90V 0.86A 6.25W
Data Sheet
0-10: $117.60
10-20: $111.72
20-40: $105.84
2N6661-E3
2N6661-E3
Vishay/Siliconix
MOSFET 90V 0.9A
Data Sheet
0-1: $30.24
1-25: $28.31
25-50: $26.39
50-100: $24.48