Product Summary
The 2SB1132 is a medium power transistor.
Parametrics
2SB1132 absolute maximum ratings: (1)collector-base voltage: -40V; (2)Collector-emitter voltage: -32V; (3)Collector current: -1A; (4)Collector power dissipation: 0.5W; (5)storage temperature: -55 to 150℃.
Features
2SB1132 features; (1)low VCE, VCE=-0.2V; (2)Compliants 2SD1664.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() 2SB1132 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132 FD5T100R |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132 Q |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132 R |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132 T100 Q |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132 T100 R |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2SB1132T100P |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) DVR PNP 32V 1A |
![]() Data Sheet |
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![]() 2SB1132T100Q |
![]() ROHM Semiconductor |
![]() Transistors Bipolar (BJT) PNP 32V 1A SO-89 |
![]() Data Sheet |
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