(Hong Kong)
Product Summary
The 2SB1132 is a medium power transistor.
Parametrics
2SB1132 absolute maximum ratings: (1)collector-base voltage: -40V; (2)Collector-emitter voltage: -32V; (3)Collector current: -1A; (4)Collector power dissipation: 0.5W; (5)storage temperature: -55 to 150℃.
Features
2SB1132 features; (1)low VCE, VCE=-0.2V; (2)Compliants 2SD1664.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SB1132 |
Other |
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Data Sheet |
Negotiable |
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2SB1132 FD5T100R |
Other |
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Data Sheet |
Negotiable |
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2SB1132 Q |
Other |
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Data Sheet |
Negotiable |
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2SB1132 R |
Other |
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Data Sheet |
Negotiable |
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2SB1132 T100 Q |
Other |
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Data Sheet |
Negotiable |
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2SB1132 T100 R |
Other |
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Data Sheet |
Negotiable |
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2SB1132T100P |
ROHM Semiconductor |
Transistors Bipolar (BJT) DVR PNP 32V 1A |
Data Sheet |
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2SB1132T100Q |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 32V 1A SO-89 |
Data Sheet |
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