Product Summary
The ADG444BNZ is a monolithic CMOS device comprising four independently selectable switches. The ADG444BNZ is designed on an enhanced LC2MOS process that provides low power dissipation yet gives high switching speed and low on resistance. The applications of the ADG444BNZ include Audio and Video Switching, Automatic Test Equipment, Precision Data Acquisition, Battery Powered Systems, Sample Hold Systems, Communication Systems.
Parametrics
ADG444BNZ absolute maximum ratings: (1)VDD to VSS: +44 V; (2)VDD to GND:–0.3 V to +25 V; (3)VSS to GND: +0.3 V to –25 V; (4)VL to GND:–0.3 V to VDD + 0.3 V; (5)Analog, Digital Inputs2: VSS – 2 V to VDD + 2 V or 30 mA, Whichever Occurs First; (6)Continuous Current, S or D: 30mA; (7)Peak Current, S or D: 100mA (Pulsed at 1 ms, 10% Duty Cycle Max); (8)Operating Temperature Range Industrial (B Version):–40℃ to +85℃; (9)Extended (T Version): –55℃ to +125℃; (10)Storage Temperature Range: –65℃ to +150℃; (11)Junction Temperature: +150℃; (12)Cerdip Package, Power Dissipation: 900 mW; (13)θJA, Thermal Impedance: 76℃/W; (14)Lead Temperature, Soldering (10 sec): +300℃; (15)Plastic Package, Power Dissipation: 470 mW; (16)θJA, Thermal Impedance: 177℃/W; (17)Lead Temperature, Soldering (10 sec): +260℃; (18)SOIC Package, Power Dissipation: 600 mW; (19)θJA, Thermal Impedance: 77℃W; (20)Lead Temperature, Soldering Vapor Phase (60 sec): +215℃; (21)Infrared (15 sec): +220℃.
Features
ADG444BNZ features: (1)44 V Supply Maximum Ratings; (2)VSS to VDD Analog Signal Range; (3)Low On Resistance (<70Ω); (4)Low DRON (9Ω max); (5)Low RON Match (3Ω max); (6)Low Power Dissipation; (7)Fast Switching Times; (8)tON<110ns; (9)tOFF<60ns; (10)Low Leakage Currents ( 3nA max); (11)Low Charge Injection (6pC max); (12)Break-Before-Make Switching Action; (13)Latch-Up Proof; (14)Plug-In Upgrade for DG201A/ADG201A, DG202A/ADG202A, DG211/ADG211A; (15)Plug in Replacement for DG441/DG442/DG444.
Diagrams
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