(Hong Kong)
Product Summary
The AO4918 is an Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor. The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4918 absolute maximum ratings: (1)drain-source voltage:30V; (2)gate-source voltage:±12V; (3)continuous drain current:9.3A or 7.4A; (4)pulsed drain current:40A; (5)power dissipation:2W; (6)junction and storage temperature range:-55 to 150℃.
Features
AO4918 features: (1)VDS (V) = 30V; (2)ID = 9.3A (VGS = 10V); (3)RDS(ON) ＜ 14.5mΩ; (4)RDS(ON) ＜ 16mΩ.
Diagrams
| Image | Part No | Mfg | Description |  |
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 AO4918 |
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Data Sheet |
Negotiable |
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AO4900 |
Other |
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Negotiable |
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AO4900A |
Other |
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Data Sheet |
Negotiable |
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AO4906 |
Other |
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Data Sheet |
Negotiable |
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AO4912 |
Other |
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Data Sheet |
Negotiable |
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AO4914 |
Other |
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Data Sheet |
Negotiable |
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AO4916 |
Other |
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Data Sheet |
Negotiable |
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