(Hong Kong)
Product Summary
The AS4LC1M16E5-60JC is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM). It is organized as 1,048,576 words×16bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.
Parametrics
AS4LC1M16E5-60JC absolute maximum ratings: (1)Input voltage VIN: -1.0V to +5.5V; (2)Output voltage VOUT: -1.0V to +5.5V; (3)Power supply voltage VCC: -1.0V to +4.0V; (4)Storage temperature TSTG: -65℃ to +150℃; (5)Soldering temperature×time TSOLDER: 260×10 ℃×sec; (6)Power dissipation PD: 0.6W; (7)Short circuit Output current IOt: 50mA.
Features
AS4LC1M16E5-60JC features: (1)Organization: 1,048,576 words × 16 bits ; (2)High speed: 50/60ns RAS access time, 20/25ns hyper page cycle time, 12/15ns CAS access time; (3)Low power consumption: Active: 500 mW max, Standby: 5.3.6 mW max, CMOS DQ; (4) Extended data out; (5)1024 refresh cycles, 16 ms refresh interval; (6)TTL-compatible, three-state I/O; (7)JEDEC standard package and pinout: 400 mil, 42-pin SOJ, 400 mil, 40/50-pin TSOP II; (8)3V power supply; (9) Industrial and commercial temperature available.
Diagrams
