(Hong Kong)
Product Summary
The as7c33512pfs36a-166tqc is a 3.3V 512 x 32/36 pipelined burst synchronous SRAM. The as7c33512pfs36a-166tqc is organized as 524,288 words x 32/36. incorporates a two-stage register-register pipeline for highest frequency on any given technology. The as7c33512pfs36a-166tqc operates from a core 3.3V power supply. I/Os of the as7c33512pfs36a-166tqc uses a separate power supply that can operate at 2.5V or3.3V. The as7c33512pfs36a-166tqc is available in a 100-pin TQFP package.
Parametrics
as7c33512pfs36a-166tqc absolute maximum ratings: (1) Power supply voltage relative to GND VDD, VDDQ: -0.5 to +4.6V; (2) Input voltage relative to GND (input pins) VIN: -0.5 to VDD +0.5V; (3) Input voltage relative to GND (I/O pins) VIN: -0.5 to VDDQ +0.5V; (4) Power dissipation PD: 1.8W; (5) DC output current IOUT: 20mA; (6) Storage temperature Tstg: -65 to 150°C; (7) Temperature under bias Tbias: -65 to +150°C.
Features
as7c33512pfs36a-166tqc features: (1) Organization: 524,288 words !á 32 or 36 bi; (2) Fast clock speeds to 166MHz; (3) Fast clock to data access: 3.4/3.8 ns; (4) Fast OE access time: 3.4/3.8 ns; (5) Fully synchronous register-to-register operation; (6) Single-cycle deselect; (7) Asynchronous output enable control; (8) Available 100-pin TQFP package; (9) Individual byte write and global write; (10) Multiple chip enables for easy expansion; (11) 3.3 V core power supply; (12) 2.5 V or 3.3V I/O operation with separate VDDQ; (13) Linear or interleaved burst control; (14) Common data inputs and data outputs; (15) Snooze mode for reduced power-standby.
Diagrams
