Product Summary
The at28bv64-30ti is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. 64K of memory of the at28bv64-30ti is organized 8,192 words by 8 bits. Manufactured with Atmel advance nonvolatile CMOS technology, the at28bv64-30ti offers access times to 200 ns with power dissipation less than 30mW. When the at28bv64-30ti is deselected the standby current is less than 50μA. The at28bv64-30ti is accessed like a Static RAM for the read or write cycles without the need for external components.
Parametrics
at28bv64-30ti absolute maximum ratings: (1) Temperature Under Bias: -55 to +125°C; (2) Storage Temperature: -65 to +150°C; (3) All Input Voltages (including NC Pins) with Respect to Ground: -0.6 to Vcc +6.25V; (4) All Output Voltages with Respect to Ground: -0.6 to Vcc +0.6V; (5) Voltage on OE and A9 with Respect to Ground: -0.6 to +13.5V.
Features
at28bv64-30ti features: (1) 2.7V to 3.6V Supply Full Read and Write Operation; (2) Low Power Dissipation: 8mA Active Current, 50μA CMOS Standby Current; (3) Read Access Time - 300 ns; (4) Byte Write - 3 ms; (5) Direct Microprocessor Control; (6) High Reliability CMOS Technology; (7) JEDEC Approved Byte-Wide Pinout; (8) Commercial and Industrial Temperature Ranges.
Diagrams
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![]() AT28BV64-30TI |
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![]() IC EEPROM 64KBIT 300NS 28TSOP |
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![]() Negotiable |
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