(Hong Kong)
Product Summary
The BSP121 is an N-channel enhancement mode vertical D-MOS transistor. It incorporates all logic and RAM required for the complete encoding and decoding processes.
Parametrics
BSP121 absolute maximum ratings: (1)Drain-source voltage VDS: max. 200 V; (2)Gate-source voltage (open drain)±VGSO: max. 20 V; (3)Drain current (DC) ID: max. 350 mA; (4)Drain current (peak) IDM: max. 1.2 A; (5)Total power dissipation up to: max. 1.5 W; (6)Junction temperature: max. 150 °C; (7)storage temperature: -65 to +150°C.
Features
BSP121 features: (1)Direct interface to C-MOS, TTL, etc.; (2)High-speed switching; (3)No secondary breakdown.
Diagrams
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 BSP121 |
Other |
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Data Sheet |
Negotiable |
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BSP100 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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BSP100,135 |
NXP Semiconductors |
MOSFET TAPE13 MOSFET |
Data Sheet |
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BSP106 |
Other |
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Data Sheet |
Negotiable |
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BSP107 |
Other |
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Data Sheet |
Negotiable |
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BSP108 |
Other |
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Data Sheet |
Negotiable |
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