Product Summary
The CXK48324R is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package line-up. The CXK48324R ia a suitable RAM for portable equipment with battery back up.
Parametrics
CXK48324R absolute maximum ratings: (1)Supply voltage Vcc: –0.5 to +7.0 °C; (2)Input voltage VIN: –0.5 to VCC +0.5 V; (3)Input and output voltage VI/O: –0.5 to VCC +0.5 V; (4)Allowable power dissipation PD: 1.0 W; (5)Operating temperature Topr: 0 to 70 °C; (6)Storage temperature Tstg: -55 to 150 °C; (7)Soldering temperature Tsolder: 260 • 10 °C • s; (8).
Features
CXK48324R features: (1)Single +5V supply: +5V ±10%; (2)Low voltage data retention: 2.0V (Min.); (3)Broad package line-up; (4)Fast access time: CXK581000ATM/AYM/AM/AP (Access time)55LL/55SL 55ns (Max.); 70LL/70SL 70ns (Max.); 10LL/10SL 100ns (Max.).; (5)CXK581000ATM/AYM 8mm × 20mm 32 pin TSOP package; (6)CXK581000AM 525mil 32 pin SOP package; (7)CXK581000AP 600mil 32 pin DIP package.