Product Summary
The CXK77920TM-11 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.
Parametrics
CXK77920TM-11 absolute maximum ratings: (1)Supply voltage VCC: –0.5 to +4.6 V; (2)Input voltage VIN: –0.5 to VCC +0.5 (4.6V max.)V; (3)Output voltage VO: –0.5 to VCC +0.5 (4.6V max.)V; (4)Allowable power dissipation PD: TBD W; (5)operating temperature Topr: 0 to 70 °C; (6)Strorage temperature Tstg: –55 to +150 °C; (7)Soldering temperature · time Tsolder: 235 · 10 °C · sec.
Features
CXK77920TM-11 features: (1)Fast cycle time (Cycle)(Frequency); CXK77B3610GB-6 6ns 166MHz; CXK77B3610GB-7 7ns 142MHz.; (2)Inputs and outputs are LVTTL/LVCMOS compatible; (3)Single 3.3V power supply: 3.3V ± 0.15V; (4)Byte-write possible; (5)OE asynchronization; (6)JTAG test circuit; (7)Package 119TBGA; (8)3 kinds of synchronous operation mode: Register-Register mode (R-R mode); Register-Flow Thru mode (R-F mode); Register-Latch mode (R-L mode).
Diagrams
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