(Hong Kong)
Product Summary
The CY7C1046B-15VCT is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the CY7C1046B-15VCT is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19). The CY7C1046B-15VCT is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolutionary) pinout.
Parametrics
CY7C1046B-15VCT absolute maximum ratings: (1)Storage Temperature : –65°C to +150°C; (2)Ambient Temperature with Power Applied: –55°C to +125°C; (3)Supply Voltage on VCC to Relative GND[1] : –0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State[1] : –0.5V to VCC + 0.5V; (5)DC Input Voltage[1] : –0.5V to VCC + 0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage : >2001V; (8)(per MIL-STD-883, Method 3015); (9)Latch-Up Current: >200 mA.
Features
CY7C1046B-15VCT features: (1)High speed: tAA = 12 ns; (2)Low active power: 935 mW (max.); (3)Low CMOS standby power (L version): 2.75 mW (max.); (4)2.0V Data Retention (400 μW at 2.0V retention); (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE and OE features.
Diagrams
