CY7C1399B-12ZXC

CY7C1399B-12ZXC, high-performance CMOS Static RAM, –0.5 V to +4.6 V, 20 mA, TSSOP, Cypress Semiconductor

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Price:: US $2.96~3.29 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	3.29 / Piece
500 ~ 1000 :	3.11 / Piece
1000 ~ 1500 :	2.96 / Piece

PartNumber:: CY7C1399B-12ZXC

Brand:: Cypress Semiconductor - Cypress | Pack: TSSOP | D/C: 03+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-10-27

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Part Number:CY7C1399B-12ZXC
US $2.96 - 3.29
Quantity:

piece

Product Summary

The CY7C1399B-12ZXC is a high-performance CMOS Static RAM. The CY7C1399B-12ZXC is organized as 32,768 words by 8 bits. Easy memory expansion of the CY7C1399B-12ZXC is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C1399B-12ZXC has an automatic power-down feature, reducing the power consumption by 95% when deselected. Writing to the CY7C1399B-12ZXC is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins.

Parametrics

CY7C1399B-12ZXC absolute maximum ratings: (1)Storage Temperature: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –55 to +125 ℃; (3)Supply Voltage on VCC to Relative GND[2]: –0.5 V to +4.6 V; (4)DC Voltage Applied to Outputs[2] in High Z State: –0.5 V to VDDQ+0.5 V; (5)DC Input Voltage[2]: –0.5 V to VDD+0.5 V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: ＞2001V; (8)Latch-Up Current: ＞200 mA.

Features

CY7C1399B-12ZXC features: (1)Single 3.3V power supply; (2)Ideal for low-voltage cache memory applications; (3)High speed: 12/15 ns; (4)Low active power: 216 mW (max.); (5)Low-power alpha immune 6T cell; (6)Plastic SOJ and TSOP packaging.