Product Summary

The F320W18B Wireless Flash Memory (W18) device with flexible multi-partition dual operation, provides high-performance asynchronous and synchronous burst reads. The F320W18B is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash memorys intrinsic nonvolatility, the F320W18B eliminates the traditional system-performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases reliability and reduces overall system power consumption and cost.

Parametrics

F320W18B absolute maximum ratings: (1)Temperature under bias: –25 °C to +85 °C; (2)Storage temperature: –65 °C to +125 °C; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +2.5 V 1; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +2.5 V; (7)Output short circuit current: 100 mA.

Features

F320W18B features: (1)Absolute Write Protection with VPP at Ground; (2)Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability; (3)5 μs (typ.)Program and Erase Suspend Latency Time; (4)Flash Data Integrator (FDI)and Common Flash Interface (CFI)Compatible; (5)Programmable WAIT Signal Polarity; (6)Burst and Page Mode Reads in all Blocks, across all partition boundaries; (7)Burst Suspend Feature.

Diagrams

F320W18B pin connection