FDV301N

FDV301N, mode field effect transistor, 100 V, 200 mA, 0.35 W, SOT

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.60~2.90 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	2.90 / Piece
500 ~ 1000 :	1.75 / Piece
1000 ~ 1500 :	0.60 / Piece

PartNumber:: FDV301N

Brand:: Fairchild Semiconductor - Fairchild | Pack: SOT | D/C: 06+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Mr. harry's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-05-31

From Other Seller

Part Number:FDV301N
US $0.60 - 2.90
FDV301N

US $0.01 - 6.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The FDV301N is a N-Channel logic level enhancement mode field effect transistor. The FDV301N is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The FDV301N has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET FDV301N can replace several different digital transistors, with different bias resistor values.

Parametrics

FDV301N absolute maximum ratings: (1)VRRM Maximum Repetitive Reverse Voltage: 100 V; (2)IF(AV)Average Rectified Forward Current: 200 mA; (3)IFSM Non-repetitive Peak Forward Surge Current: Pulse Width = 1.0 second: 1A, Pulse Width = 1.0 microsecond: 2A; (4)TSTG Storage Temperature Range: -55 to +150 °C; (5)TJ Operating Junction Temperature: 150 °C.

Features

FDV301N features: (1)VDSS, VCC, Drain-Source Voltage, Power Supply Voltage: 25 V; (2)VGSS, VI, Gate-Source Voltage, VIN: 8 V; (3)ID, IO, Drain/Output Current - Continuous: 0.22 A, 0.5A; (4)PD, Maximum Power Dissipation: 0.35 W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃; (6)ESD, Electrostatic Discharge Rating: 6.0 kV; (7)RθJA, Thermal Resistance, Junction-to-Ambient: 357℃/W.