Product Summary

The FLL55 is a Power GaAs FET that is specifically designed toprovide high power at L-Band frequencies with gain, linearity andefficiency superior to that of silicon devices. The performance inmultitone environments for Class AB operation make them ideallysuited for base station applications.

Parametrics

FLL55 absolute maximum rarings: (1)Drain-Source Voltage VDS: 15 V; (2)Gate-Source Voltage VGS: -5 V; (3)Total Power Dissipation: Tc = 25 °C, 21.4 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C

Features

FLL55 features: (1)High Output Power: P1dB = 36.0dBm (Typ.); (2)High Gain: G1dB = 11.5dB (Typ.); (3)High PAE: ηadd = 37% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package

Diagrams

FLL55 block diagram