Product Summary

The HIP2101IBZT is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2101IBZT with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Applications are (1)Telecom Half Bridge Power Supplies; (2)Avionics DC-DC Converters; (3)Two-Switch Forward Converters; (4)Active Clamp Forward Converters.

Parametrics

HIP2101IBZT absolute maximum ratings: (1)Supply Voltage, VDD, VHB-VHS: -0.3V to 18V; (2)LI and HI Voltages: -0.3V to 7.0V; (3)Voltage on LO: -0.3V to VDD +0.3V; (4)Voltage on HO: VHS -0.3V to VHB +0.3V; (5)Voltage on HS (Continuous): -1V to 110V; (6)Voltage on HB: +118V; (7)Average Current in VDD to HB diode: 100mA; (8)Storage Temperature Range: -65°C to 150°C; (9)Junction Temperature Range: -55°C to 150°C; (10)Lead Temperature (Soldering 10s - SOIC Lead Tips Only): 300°C.

Features

HIP2101IBZT features: (1)Drives N-Channel MOSFET Half Bridge; (2)SOIC, EPSOIC, QFN and DFN Package Options; (3)SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221; (4)Pb-free Product Available (RoHS Compliant); (5)Bootstrap Supply Max Voltage to 114VDC; (6)On-Chip 1Ω Bootstrap Diode; (7)Fast Propagation Times for Multi-MHz Circuits; (8)Drives 1000pF Load with Rise and Fall Times Typ. 10ns; (9)TTL/CMOS Input Thresholds Increase Flexibility; (10)Independent Inputs for Non-Half Bridge Topologies; (11)No Start-Up Problems; (12)Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt.

Diagrams

HIP2101IBZT pin connection 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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HIP2101IBZT
HIP2101IBZT

Intersil

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Data Sheet

0-1930: $1.10
1930-2500: $1.10
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(USD)
Quantity
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HIP2060

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Data Sheet

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Data Sheet

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Data Sheet

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Data Sheet

0-1: $2.39
1-25: $1.94
25-100: $1.35
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Data Sheet

Negotiable