Product Summary
The HIP2101IBZT is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2101IBZT with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Applications are (1)Telecom Half Bridge Power Supplies; (2)Avionics DC-DC Converters; (3)Two-Switch Forward Converters; (4)Active Clamp Forward Converters.
Parametrics
HIP2101IBZT absolute maximum ratings: (1)Supply Voltage, VDD, VHB-VHS: -0.3V to 18V; (2)LI and HI Voltages: -0.3V to 7.0V; (3)Voltage on LO: -0.3V to VDD +0.3V; (4)Voltage on HO: VHS -0.3V to VHB +0.3V; (5)Voltage on HS (Continuous): -1V to 110V; (6)Voltage on HB: +118V; (7)Average Current in VDD to HB diode: 100mA; (8)Storage Temperature Range: -65°C to 150°C; (9)Junction Temperature Range: -55°C to 150°C; (10)Lead Temperature (Soldering 10s - SOIC Lead Tips Only): 300°C.
Features
HIP2101IBZT features: (1)Drives N-Channel MOSFET Half Bridge; (2)SOIC, EPSOIC, QFN and DFN Package Options; (3)SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221; (4)Pb-free Product Available (RoHS Compliant); (5)Bootstrap Supply Max Voltage to 114VDC; (6)On-Chip 1Ω Bootstrap Diode; (7)Fast Propagation Times for Multi-MHz Circuits; (8)Drives 1000pF Load with Rise and Fall Times Typ. 10ns; (9)TTL/CMOS Input Thresholds Increase Flexibility; (10)Independent Inputs for Non-Half Bridge Topologies; (11)No Start-Up Problems; (12)Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt.
Diagrams
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![]() HIP2101IBZT |
![]() Intersil |
![]() Power Driver ICs VER 100V HALFBRDG DR VR |
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![]() HIP2100EIBZT |
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![]() IC DRIVER HALF BRDG 100V 8EPSOIC |
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