(Hong Kong)
Product Summary
The IPS022G are fully protected dual low side SMARTPOWER MOSFETs respectively. They feature over-current, over-temperature, ESD protection and drainto source active clamp.These devices combine aHEXFET POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and supports efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
Parametrics
The absolute maximum ratings of IPS022G are (1)Maximum drain to source voltage:47V; (2)Maximum input voltage:7V; (3)Maximum IN current:+10mA; (4)Diode max. continuous current (1)( lsd mosfets, rth=125°C/W):1.4A; (5)Maximum power dissipation(1)( Pd mosfets, rth=125°C/W):1W; (6)Max. storage temperature:150°C; (7)Max. junction temperature:+150°C; (8)
Features
The features of IPS022G can be summarized as (1)Over temperature shutdown; (2)Over current shutdown; (3)Active clamp; (4)Low current & logic level input; (5)E.S.D protection
Diagrams
<P><IMG alt="IPS022G Block Diagram" src="http://www.seekic.com/uploadfile/ic-mfg/201282201824974.jpg" border=0></P>
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Pricing (USD) |
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 IPS022G |
International Rectifier |
Power Driver ICs IPS 1 Ch Low Side Driver |
Data Sheet |
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IPS022GTR |
International Rectifier |
Power Driver ICs |
Data Sheet |
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