Product Summary
The ir2109 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. The logic input of the ir2109 is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The ir2109 features a highpulse current buffer stage designed for minimum driver cross-conduction.
Parametrics
ir2109 absolute maximum ratings: (1) High side floating absolute voltage VB: -0.3 to 625V; (2) High side floating supply offset voltage Vs: VB-25 to VB+0.3V; (3) High side floating output voltage VHO: VS-0.3 to VB+0.3V; (4) Low side and logic fixed supply voltage: -0.3 to 25V; (5) Low side output voltage VLO: -0.3 to VCC +0.3V; (6) Low side output voltage dVs/dt: 50V/ns; (7) Junction temperatue TJ: 150°C; (8) Storage temperature Ts: -50 to 150°C; (9) Lead temperature (soldering, 10 seconds) TL: 300°C.
Features
ir2109 features: (1) Floating channel designed for bootstrap operation Fully operational to +600V; (2) Tolerant to negative transient voltage dV/dt immune; (3) Gate drive supply range from 10 to 20V; (4) Undervoltage lockout for both channels; (5) OUT 3.3V, 5V and 15V input logic compatible; (6) Cross-conduction prevention logic; (7) Matched propagation delay for both channels; (8) Logic and power ground +/- 5V offset; (9) Lower di/dt gate driver for better noise immunity; (10) Shut down input turns off both channels.
Diagrams
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![]() International Rectifier |
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![]() IR2109SPBF |
![]() International Rectifier |
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