Product Summary
The IR2308S is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Parametrics
IR2308S absolute maximum ratings: (1)High side floating absolute voltage: -0.3 to 625 V; (2)High side floating supply offset voltage: VB - 25 to VB + 0.3 V; (3)High side floating output voltage: VS - 0.3 to VB + 0.3 V; (4)Low side and logic fixed supply voltage: -0.3 to 25 V; (5)Low side output voltage: -0.3 to VCC + 0.3 V; (6)Logic input voltage (HIN & LIN ): VSS - 0.3 to VCC + 0.3 V; (7)Allowable offset supply voltage transient: 50 V/ns; (8)Storage temperature: -50 to 150 ℃.
Features
IR2308S features: (1)Gate drive supply range from 10 to 20V; (2)Undervoltage lockout for both channels; (3)3.3V, 5V and 15V input logic compatible; (4)Cross-conduction prevention logic; (5)Matched propagation delay for both channels; (6)Outputs in phase with inputs; (7)Logic and power ground +/- 5V offset.; (8)Internal 540ns dead-time; (9)Lower di/dt gate driver for better noise immunity; (10)Also available LEAD_FREE.
Diagrams
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![]() IR2308SPBF |
![]() International Rectifier |
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![]() IR2308STRPBF |
![]() International Rectifier |
![]() Power Driver ICs Half Bridge Drvr Hi Volt & Hi Speed |
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![]() IR2308S |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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