Product Summary

The IRF7316 is a HEXFET Power MOSFET. The IRF7316 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7316 absolute maximum ratings: (1)Drain-Source Voltage: ﹣30 V; (2)Gate-Source Voltage: ± 20V; (3)Continuous drain current: TA = 25℃:﹣4.9 A, TA = 70℃: ﹣3.9 A; (4)Pulsed Drain Current: ﹣30 A; (5)Continuous Source Current (Diode Conduction): ﹣2.5A; (6)Maximum Power Dissipation: TA = 25℃: 2.0W, TA = 70℃: 1.3W; (7)Single Pulse Avalanche Energy: 140 mJ; (8)Avalanche Current: ﹣2.8 A; (9)Repetitive Avalanche Energy: 0.20 mJ; (10)Peak Diode Recovery dv/dt: ﹣5.0 V/ ns; (11)Junction and Storage Temperature Range: -55℃ to + 150℃.

Features

IRF7316 features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.

Diagrams

IRF7316 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7316
IRF7316
Other

Data Sheet
Negotiable 
IRF7316GTRPBF
IRF7316GTRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -30V 4.9A
Data Sheet
0-1: $0.87
1-25: $0.53
25-100: $0.37
100-250: $0.35
IRF7316PBF
IRF7316PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.83
1-25: $0.51
25-100: $0.35
100-250: $0.30
IRF7316QTRPBF
IRF7316QTRPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7316QPBF
IRF7316QPBF
International Rectifier
MOSFET
Data Sheet
Negotiable 
IRF7316TR
IRF7316TR

MOSFET 2P-CH 30V 4.9A 8-SOIC
Data Sheet
Negotiable 
IRF7316TRPBF
IRF7316TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -30V 4.9A
Data Sheet
0-1: $0.83
1-25: $0.51
25-100: $0.35
100-250: $0.33