Product Summary
The IRFB20N50K is a SMPS MOSFET. It can be used in (1)switch mode power supply (SMPS); (2)uninterruptible power supply; (3)high speed power switching; (4)hard switched and high frequency circuits.
Parametrics
IRFB20N50K absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 20 A; (2)Continuous Drain Current, VGS @ 10V: 12 A; (3)Pulsed Drain Current: 80 A; (4)Power Dissipation: 280 W; (5)Linear Derating Factor: 2.2 W/°C; (6)Gate-to-Source Voltage: ± 30 V; (7)Peak Diode Recovery dv/dt: 6.9 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to + 150 °C.
Features
IRFB20N50K features: (1)low gate charge qg results in simple drive requirement; (2)improved gate, avalanche and dynamicdv/dt ruggedness; (3)fully characterized capacitance and avalanche voltage and current; (4)low RDS(on).
Diagrams
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![]() IRFB20N50K |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 20 Amp |
![]() Data Sheet |
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![]() IRFB20N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 20 Amp |
![]() Data Sheet |
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