(Hong Kong)
Product Summary
The IRFB9N30A is a HEXFET Power MOSFET. The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRFB9N30A absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ±30 V; (2)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 9.3 A; (3)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 5.9A; (4)IDM Pulsed Drain Current : 2: 37A; (5)Power Dissipation: 96W; (6)Linear Derating Factor: 0.77W/℃; (9)TJ Operating Junction and TSTG Storage Temperature Range: -50 to + 150 ℃.
Features
IRFB9N30A features: (1)Dynamic dv/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paraleing; (5)Dynamic dv/dt Rated; (6)Simple Drive Requirements; (7)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRFB9N30A |
|
MOSFET N-CH 300V 9.3A TO-220AB |
Data Sheet |
Negotiable |
|
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 |
IRFB9N30A, SiHFB9N30A |
Other |
|
Data Sheet |
Negotiable |
|
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 |
IRFB9N30APBF |
Vishay/Siliconix |
MOSFET N-Chan 300V 30 Amp |
Data Sheet |
Negotiable |
|
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