Product Summary
The IRFB9N60A is a Hexfet power mosfet. The IRFB9N60A from International Rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRFB9N60A absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 9.2A; (2) ontinuous Drain Current, VGS@10V, ID@Tc=100°C: 5.8A; (3) Pulsed Drain Current IDM: 37A; (4) Power Dissipation PD@Tc=25°C: 170W; (5) Linear Derating Factor: 1.3W/°C; 96) Gate-to-Source Voltage VGS: ±30V; (6) Single Pulse Avalanche Energy EAS: 290mJ; (7) Avalanche Current IAR: 9.2A; (8) Repetitive Avalanche Energy EAR: 17mJ; (9) Peak Diode Recovery dv/dt: 5.0V/ns; (10) Operating Junction and Storage Temperature Range: -55 to +150°C; (11) Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) .
Features
IRFB9N60A features: (1) Dynamic dv/dt Rating; (2) Repetitive Avalanche Rated; (3) Fast Switching; (4) Ease of Paraleling; (5) Simple Drive Requirements.
Diagrams
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![]() IRFB9N60A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 600V 9.2 Amp |
![]() Data Sheet |
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![]() IRFB9N60A, SiHFB9N60A |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRFB9N60APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 600V 9.2 Amp |
![]() Data Sheet |
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