Product Summary
The IRFPG40 is a 4.3A, 1000V, 3.500 Ohm, N-channel power MOSFET. It is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Parametrics
IRFPG40 absolute maximum ratings: (1)Drain to Source Voltage: 1000 V; (2)Drain to Gate Voltage: 1000 V; (3)Continuous Drain Current: 4.3 A; (4)Pulsed Drain Current: 17 A; (5)Gate to Source Voltage: ±20 V; (6)Maximum Power Dissipation: 150 W; (7)Linear Derating Factor: 1.2 W/ °C; (8)Single Pulse Avalanche Energy Rating: 490 mJ; (9)Operating and Storage Temperature Range: -55 to 150°C.
Features
IRFPG40 features: (1)4.3A, 1000V; (2)rDS(ON) = 3.500Ω; (3)UIS SOA rating curve (single pulse); (4)-55°C to 150°C operating and storage temperature.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() IRFPG40 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 1000V 4.3 Amp |
![]() Data Sheet |
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![]() IRFPG40, SiHFPG40 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRFPG40PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 1000V 4.3 Amp |
![]() Data Sheet |
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