(Hong Kong)
Product Summary
The IRFSL 3206 is a HEXFET Power MOSFET. The applications of it are High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFSL 3206 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 210A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 150A; (3)Pulsed Drain Current, IDM: 840A; (4)PD @TC = 25℃ Power Dissipation: 300W; (5)Linear Derating Factor: 2.0W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery dv/dt, dv/dt: 5 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds 300 (1.6mm from case )℃; (10)Mounting torqe, 6-32 or M3 screw: 10 lbf·in (1.1N·m).
Features
IRFSL 3206 features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
