(Hong Kong)
Product Summary
The KHB4D5N60F planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
Parametrics
KHB4D5N60F absolute maximum ratings: (1)Drain-Source Voltage VDSS: 600 V; (2)Gate-Source Voltage VGSS: ±30 V; (3)Drain Current: @TC=25: 4.5A, @TC=100: 2.8A, Pulsed: 18A; (4)Single Pulsed Avalanche Energy: 260 mJ; (5)Repetitive Avalanche Energy: 10.6 mJ; (6)Peak Diode Recovery dv/dt: 4.5 V/ns; (7)Drain Power Dissipation: 36 W; (8)Maximum Junction Temperature Tj: 150°C; (9)Storage Temperature Range: -55 to 150°C.
Features
KHB4D5N60F features: (1)VDSS(Min.)= 600V, ID= 4.5A; (2)Drain-Source ON Resistance : RDS(ON)=2.5Ω @VGS =10V; (3)Qg(typ.)=17nC.
Diagrams
