Product Summary
The MMBT2222A-7 is an NPN small signal surface mount transistor.
Parametrics
MMBT2222A-7 absolute maximum ratings: (1)Collector-Base Voltage VCBO: 75 V; (2)Collector-Emitter Voltage VCEO: 40 V; (3)Emitter-Base Voltage VEBO: 6.0 V; (4)Collector Current - Continuous: 600 mA; (5)Power Dissipation: 300 mW; (6)Thermal Resistance, Junction to Ambient: 417 ℃/W; (7)Operating and Storage and Temperature Range: -55 to +150°C.
Features
MMBT2222A-7 features: (1)Epitaxial Planar Die Construction; (2)Complementary PNP Type Available; (3)Ideal for Medium Power Amplification and Switching.
Diagrams
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![]() MMBT2222A-7 |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) 40V 300mW |
![]() Data Sheet |
![]() Negotiable |
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![]() MMBT2222A-7-F |
![]() Diodes Inc. |
![]() Transistors Bipolar (BJT) 40V 300mW |
![]() Data Sheet |
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