Product Summary

The MMBT2222A-7 is an NPN small signal surface mount transistor.

Parametrics

MMBT2222A-7 absolute maximum ratings: (1)Collector-Base Voltage VCBO: 75 V; (2)Collector-Emitter Voltage VCEO: 40 V; (3)Emitter-Base Voltage VEBO: 6.0 V; (4)Collector Current - Continuous: 600 mA; (5)Power Dissipation: 300 mW; (6)Thermal Resistance, Junction to Ambient: 417 ℃/W; (7)Operating and Storage and Temperature Range: -55 to +150°C.

Features

MMBT2222A-7 features: (1)Epitaxial Planar Die Construction; (2)Complementary PNP Type Available; (3)Ideal for Medium Power Amplification and Switching.

Diagrams

MMBT2222A-7 dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MMBT2222A-7
MMBT2222A-7

Diodes Inc.

Transistors Bipolar (BJT) 40V 300mW

Data Sheet

Negotiable 
MMBT2222A-7-F
MMBT2222A-7-F

Diodes Inc.

Transistors Bipolar (BJT) 40V 300mW

Data Sheet

0-1: $0.19
1-10: $0.12
10-100: $0.05
100-500: $0.05