Product Summary
The MPQ2222 is an NPN silicon quad general purpose transistor.
Parametrics
MPQ2222 absolute maximum ratings: (1)Collector–Emitter Voltage: 30 Vdc; (2)Collector–Base Voltage: 60 Vdc; (3)Emitter–Base Voltage: 5.0 Vdc; (4)Collector Current — Continuous: 500 mAdc; (5)Total Power Dissipation @ TA = 25℃: 0.52 W; (6)Total Power Dissipation Derate above 25℃: 4.2 mW/℃; (7)Total Power Dissipation @ TA = 25℃: 0.8 W; (8)Total Power Dissipation Derate above 25℃: 6.4 mW/℃; (9)Operating and Storage,Junction Temperature Range: –55 to +150℃.
Features
MPQ2222 specifications: (1)Collector–Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0): 30 min Vdc; (2)Collector–Base Breakdown Voltage(IC = 10 μAdc, IE = 0): 60 min Vdc; (3)Emitter–Base Breakdown Voltage(IB = 10 μAdc, IC = 0): 5.0 min Vdc; (4)Collector Cutoff Current(VCB = 50 Vdc, IE = 0): 50 nAdc; (5)Emitter Cutoff Current(VEB = 3.0 Vdc, IC = 0): 100 nAdc.
Diagrams
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![]() Transistors Bipolar (BJT) Small Signal Transistor |
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![]() Central Semiconductor |
![]() Transistors Bipolar (BJT) Quad PNP |
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