(Hong Kong)
Product Summary
The PSMN040-200W is an N-channel TrenchMOS transistor. It can be used in d.c. to d.c. converters and switched mode power supplies. It uses the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.
Parametrics
PSMN040-200W absolute maximum ratings: (1)Drain-source voltage: 200 V; (2)Drain-gate voltage: 200 V; (3)Gate-source voltage: +/-20V; (4)Continuous drain current: 50 A; (5)Pulsed drain current: 200 A; (6)Storage Temperature Range: - 55 to 175 °C; (7)Total power dissipation: 300 W; (8)Non-repetitive avalanche energy: 661 mJ; (9)Non-repetitive avalanche current: 50 A.
Features
PSMN040-200W features: (1)Trench technology; (2)Very low on-state resistance; (3)Fast switching; (4)Low thermal resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 PSMN040-200W |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
||||
|
PSMN040-200W,127 |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
||||
