(Hong Kong)
Product Summary
The R1RW0408DGE-2LR is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Parametrics
R1RW0408DGE-2LR absolute maximum ratings: (1)Supply voltage relative to VSS: -0.5 to +4.6 V; (2)Voltage on any pin relative to VSS: -0.5 to VCC+0.5 V; (3)Power dissipation: 1.0 W; (4)Operating temperature: 0 to +70 °C; (5)Storage temperature: -55 to +125 °C; (6)Storage temperature under bias: -10 to +85 °C.
Features
R1RW0408DGE-2LR features: (1)Single supply: 3.3 V +/-0.3 V; (2)Access time: 12 ns (max); (3)Completely static memory-No clock or timing strobe required; (4)Equal access and cycle times; (5)Directly TTL compatible-All inputs and outputs; (6)Operating current: 100 mA (max); (7)TTL standby current: 40 mA (max); (8)CMOS standby current : 5 mA (max): 0.8 mA (max) (L-version); (9)Data retention current: 0.4 mA (max) (L-version); (10)Data retention voltage: 2 V (min) (L-version); (11)Center VCC and VSS type pin out.
Diagrams
