Product Summary
The SI4539DY-T1 is a dual N&P-channel enhancement mode field effect transistor. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. And this device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
SI4539DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: 30 or -30 V; (2)Gate-Source Voltage: 20 or -20 V; (3)Drain Current - Continuous: 7 or -5 A; (4)Power Dissipation for Dual Operation: 2 W; (5)Operating and Storage Temperature Range: -55 to 150 °C; (6)Thermal Resistance, Junction-to-Ambient: 78 °C/W; (7)Thermal Resistance, Junction-to-Case: 40 °C/W.
Features
SI4539DY-T1 features: (1)N-Channel 7.0 A,30 V, RDS(ON)=0.028 W @ VGS=10 V or RDS(ON)=0.040 W @ VGS= 4.5 V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package; (4)Dual (N & P-Channel) MOSFET in surface mount package.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() SI4539DY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 30 Volt 5.9/4.9A 2W |
![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
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![]() Si4500BDY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SI4500BDY-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 9.1/5.3A 1.3W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4500BDY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
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![]() |
![]() SI4500BDY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V |
![]() Data Sheet |
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![]() |
![]() SI4500DY |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4500DY-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
![]() Negotiable |
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