SI4539DY-T1

SI4539DY-T1, dual N&P-channel enhancement mode field effect transistor, 40 °C/W, 2 W, surface mount package

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Price:: US $0.25~0.42 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	0.42 / Piece
500 ~ 1000 :	0.34 / Piece
1000 ~ 1500 :	0.25 / Piece

PartNumber:: SI4539DY-T1

Brand:: Silicon image - Silicon | Pack: SMD | D/C: 00+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-09

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Part Number:SI4539DY-T1
US $0.25 - 0.42
Quantity:

piece

Product Summary

The SI4539DY-T1 is a dual N&P-channel enhancement mode field effect transistor. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. And this device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

SI4539DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: 30 or -30 V; (2)Gate-Source Voltage: 20 or -20 V; (3)Drain Current - Continuous: 7 or -5 A; (4)Power Dissipation for Dual Operation: 2 W; (5)Operating and Storage Temperature Range: -55 to 150 °C; (6)Thermal Resistance, Junction-to-Ambient: 78 °C/W; (7)Thermal Resistance, Junction-to-Case: 40 °C/W.

Features

SI4539DY-T1 features: (1)N-Channel 7.0 A,30 V, RDS(ON)=0.028 W @ VGS=10 V or RDS(ON)=0.040 W @ VGS= 4.5 V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package; (4)Dual (N & P-Channel) MOSFET in surface mount package.