Product Summary
The STP14NF10 MOSFET realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. The STP14NF10 is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. The STP14NF10 is also intended for any applications with low gate drive requirements. Applications are (1)high-efficiency DC-DC converters; (2)ups and motor control.
Parametrics
STP14NF10 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 100 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 100 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous)at TC = 25°C: 15 A; (5)ID Drain Current (continuous)at TC = 100°C: 10 A; (6)IDM(·)Drain Current (pulsed): 60A; (7)Ptot Total Dissipation at TC = 25°C: 60 W; (8)EAS (2)Single Pulse Avalanche Energy: 70 mJ; (9)VISO Insulation Withstand Voltage (DC): 2000 V; (10)Tstg Storage Temperature: -55 to 175 °C.
Features
STP14NF10 features: (1)typical RDS(on)= 0.115 W; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)applicatiooriented characterization; (5)surface-mounting D2PAK (TO-263)power package itube (NO SUFFIX)or itape & reel.
Diagrams
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![]() STP14NF10 |
![]() STMicroelectronics |
![]() MOSFET N Ch 100V 0.115 OHM 15A |
![]() Data Sheet |
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![]() STP14NF10FP |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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