Product Summary

The STP14NF10 MOSFET realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. The STP14NF10 is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. The STP14NF10 is also intended for any applications with low gate drive requirements. Applications are (1)high-efficiency DC-DC converters; (2)ups and motor control.

Parametrics

STP14NF10 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 100 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 100 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous)at TC = 25°C: 15 A; (5)ID Drain Current (continuous)at TC = 100°C: 10 A; (6)IDM(·)Drain Current (pulsed): 60A; (7)Ptot Total Dissipation at TC = 25°C: 60 W; (8)EAS (2)Single Pulse Avalanche Energy: 70 mJ; (9)VISO Insulation Withstand Voltage (DC): 2000 V; (10)Tstg Storage Temperature: -55 to 175 °C.

Features

STP14NF10 features: (1)typical RDS(on)= 0.115 W; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)applicatiooriented characterization; (5)surface-mounting D2PAK (TO-263)power package itube (NO SUFFIX)or itape & reel.

Diagrams

STP14NF10 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP14NF10
STP14NF10
STMicroelectronics
MOSFET N Ch 100V 0.115 OHM 15A
Data Sheet
0-1: $0.53
1-10: $0.44
10-100: $0.37
100-250: $0.32
STP14NF10FP
STP14NF10FP
Other

Data Sheet
Negotiable