Product Summary
The STS5DNF20V is a Power MOSFET. The STS5DNF20V is the latest development of STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications are (1)dc motor drive; (2)dc-dc converters; (3)battery management in nomadic equipment; (4)power management in portable/desktop pcs.
Parametrics
STS5DNF20V absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 20 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 20 V; (3)VGS Gate- source Voltage: ± 12 V; (4)ID Drain Current (continuous)at TC = 25°C Single Operation: 5 A; (5)ID Drain Current (continuous)at TC = 100°C Single Operation: 3 A; (6)IDM(·)Drain Current (pulsed)20 A; (7)Ptot Total Dissipation at TC = 25°C Dual Operation: 1.6 W; (8)Ptot Total Dissipation at TC = 25°C Single Operation: 2 W; (9)Max. Operating Junction Temperature: -55 to 150°C; (10)Storage Temperature: -55 to 150°C.
Features
STS5DNF20V features: (1)typical RDS(on)= 0.030 W @ 4.5 V; (2)typical RDS(on)= 0.037 W @ 2.7 V; (3)ultra low threshold gate drive (2.7 V); (4)standard outline for easy automated surface mount assembly.
Diagrams
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![]() MOSFET N-Ch 20 Volt 5 Amp |
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