Product Summary

The TIP35C is a complementary Silicon high-power transistor. And it can be used in general–purpose power amplifier and switching applications.

Parametrics

TIP35C absolute maximum ratings: (1)Collector–emitter voltage: 100 V; (2)Collector–base voltage: 100 V; (3)Emitter - base voltage: 180 A; (4)Collector current - continuous: 25 Adc; (5)Collector current - peak: 40 Adc; (6)Base current - continuous: 5.0 Adc; (7)Total power dissipation @ Tc=25°C: 125 W; (8)Total power dissipation derate above 25°C: 1.0 W/°C; (9)Operating and storage junction temperature range: -65 to +150°C.

Features

TIP35C features: (1)25 A Collector Current; (2)Low Leakage Current-ICEO= 1.0 mA @ 30 and 60 V; (3)Excellent DC Gain-hFE= 40 Typ @ 15 A; (4)High Current Gain Bandwidth Product= 3.0 min @ IC= 1.0 A, f= 1.0 MHz.

Diagrams

TIP35C dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TIP35C
TIP35C
STMicroelectronics
Transistors Bipolar (BJT) NPN Gen Pur Power
Data Sheet
0-1: $0.95
1-10: $0.89
10-100: $0.78
100-250: $0.70
TIP35CG
TIP35CG
ON Semiconductor
Transistors Bipolar (BJT) 25A 100V 125W NPN
Data Sheet
0-1: $1.56
1-25: $1.34
25-100: $1.12
100-500: $0.98
TIP35CP
TIP35CP
STMicroelectronics
Transistors Bipolar (BJT) Complementary power transistors
Data Sheet
0-360: $0.91
360-500: $0.82
500-1000: $0.77
1000-2000: $0.72
TIP35CW
TIP35CW
STMicroelectronics
Transistors Bipolar (BJT) HIGH POWER TRANS
Data Sheet
0-1: $1.40
1-10: $1.20
10-50: $1.10
50-100: $0.91
TIP35C-S
TIP35C-S
Bourns
Transistors Bipolar (BJT) 100V 25A NPN
Data Sheet
Negotiable