Product Summary
The IR2106(S) are high voltage,high speed power MOSFET andIGBT drivers with independent highand low side referenced output chan-nels. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction.The logic input is compatible withstandard CMOS or LSTTL output,down to 3.3V logic. The output driv-ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floatingchannel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 600 volts
Parametrics
The absolute maximum ratings of IR2106S are (1)High side floating absolute voltage:625V; (2)High side floating supply offset voltage:VB + 0.3V; (3)High side floating output voltage:VB + 0.3V; (4)Low side and logic fixed supply voltage:25V; (5)Low side output voltage:VCC + 0.3V; (6)Logic input voltage:VCC + 0.3V; (7)Allowable offset supply voltage transient:50V/ns; (8)Junction temperature:150°C; (9)Storage temperature:150°C; (10)Lead temperature (soldering, 10 seconds):300°C
Features
The features of IR2106S can be summarized as (1)Floating channel designed for bootstrap operation :Fully operational to +600V; Tolerant to negative transient voltagedV/dt immune; (2)Gate drive supply range from 10 to 20V (IR2106(4)); (3)Undervoltage lockout for both channels; (4)3.3V, 5V and 15V input logic compatible; (5)Matched propagation delay for both channels; (6)Logic and power ground +/- 5V offset.; (7)Lower di/dt gate driver for better noise immunity; (8)Outputs in phase with inputs (IR2106)
Diagrams
<P><IMG alt="IR2106S Pin Configuration" src="http://www.seekic.com/uploadfile/ic-mfg/201282195824521.jpg" border=0></P>
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![]() IR2106STR |
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![]() IC DRIVER HIGH/LOW 600V 8-SOIC |
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![]() IR2106STRPBF |
![]() International Rectifier |
![]() Power Driver ICs Hi&Lw Sd Drvr Soft Trn On Noninvert |
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