(Hong Kong)
Product Summary
The BSM200GA170DN2 is an IGBT module.
Parametrics
BSM200GA170DN2 absolute maximum ratings: (1)collector emitter voltage, VCES: 1200V; (2)DC collector current, IC: 370A; (3)repetitive peak collector current, ICRM: 400A; (4)total power dissipation, Ptot: 1470W; (5)gate-emitter peak voltage, VGES: ±20V.
Features
BSM200GA170DN2 features: (1)forward voltage, VF: 2.8V; (2)peak reverse recovery current, IRM: 1100A; (3)recovered charge, Qr: 500μC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BSM200GA170DN2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 290A |
Data Sheet |
Negotiable |
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BSM200GA170DN2S |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 290A |
Data Sheet |
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BSM200GA170DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1700V 200A |
Data Sheet |
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