Product Summary
The BSM25GB120DN2 is an IGBT Power Module.
Parametrics
BSM25GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current TC = 25 °C IC: 38 A; (5)Pulsed collector current, tp = 1 ms TC = 25 °C ICpuls: 76 A; (6)Power dissipation per IGBT TC = 25 °C Ptot : 200 W; (7)Chip temperature Tj: + 150 °C; (8)Storage temperature Tstg: -55 ... + 150°C; (9)Thermal resistance, chip case RthJC: ≤ 0.6 K/W; (10)Insulation test voltage, t = 1min. Vis: 2500 Vac.
Features
BSM25GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM25GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 25A DUAL |
Data Sheet |
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BSM200GA120D |
Other |
Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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