Product Summary
The FF150R12YT3 is an IGBT module.
Parametrics
FF150R12YT3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 225A; (3)repetitive peak collector current, Ptot: 780W; (4)gate-emitter peak votlage, VGES: ±20V.
Features
FF150R12YT3 features: (1)Collector - emitter maximum voltage VCEO: 1200 V; (2)In 25℃ continuous collector current: 225 A; (3)The maximum working temperature: + 125℃; (4)Packaging/box: 62 mm; (5)Grid/emitter maximum voltage: + / - 20 V; (6)The minimum working temperature: - 40℃; (7)Installation style: Screw.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF150R12YT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 200A |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FF150R12KE3_B8 |
Infineon Technologies |
IGBT Modules IGBT 1200V 150A |
Data Sheet |
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FF150R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 150A DUAL |
Data Sheet |
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FF150R12KE3G_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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FF150R12KS4 |
Infineon Technologies |
IGBT Modules 1200V 150A DUAL |
Data Sheet |
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FF150R12KS4_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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FF150R12KT3G |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 225A |
Data Sheet |
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