Product Summary
The BSM150GB170DLC is an IGBT module.
Parametrics
BSM150GB170DLC absolute maximum ratings: (1)collector-emitter voltage:600V; (2)repetitive peak collector current:300A; (3)total power dissipation:1250W; (4)gate-emitter peak voltage:±20V; (5)DC-collector current: TC=80℃, Tvj=150℃:150A, TC=25℃, Tvj=150℃:300A.
Features
BSM150GB170DLC features: (1)gate threshold voltage:4.5V to 6.5V; (2)gate charge:1.60μC; (3)internal gate resistor:2.5Ω; (4)input capacitance:11.0nF; (5)reverse transfer capacitance:0.70nF; (6)collector-emitter cut-off current:5.0mA; (7)gate-emitter leakage current:400nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSM150GB170DLC |
Infineon Technologies |
IGBT Modules 1700V 150A DUAL |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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