Product Summary

The FLL177 is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. The FLL177 is assembled in hermetic metal/ceramic package.

Parametrics

FLL177 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, Pt: 7.5W; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.

Features

FLL177 features: (1)High Output Power: P1dB=32.5dBm (Typ.); (2)High Gain: G1dB=12.5dB (Typ.); (3)High PAE: ndd=46% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.

Diagrams

FLL177 block diagram