(Hong Kong)
Product Summary
The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7GHz band amplifiers.The hermetically sealed metal-ceramicpackage guarantees high reliability.
Parametrics
MGFS45V2527A absolute maximum ratings: (1)High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz; (2)High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz; (3)High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz; (4)Low distortion [item -51]IM3=-45dBc(TYP.) @Po=34.5 dBm S.C.L.
Features
MGFS45V2527A features: (1)VGDO: Gate to drain voltage -15V ; (2)VGSO: Gate to source voltage -15V; (3)ID: Drain current 22A.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MGFS45V2527A |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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MGFS45V2527A |
Other |
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Data Sheet |
Negotiable |
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MGFS48B2122 |
Other |
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Data Sheet |
Negotiable |
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MGFS48V2527 |
Other |
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Data Sheet |
Negotiable |
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MGFS52B2122 |
Other |
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Data Sheet |
Negotiable |
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MGFS52BN2122A |
Other |
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Data Sheet |
Negotiable |
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MGFS45V2527 |
Other |
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Data Sheet |
Negotiable |
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