(Hong Kong)
Product Summary
The mrf6p27160h is a RF power field effect transistor. It is designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Parametrics
mrf6p27160h absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Total Device Dissipation @ TC = 25℃ PD: 700W; Derate above 25℃ PD: 4W/℃ (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Operating Junction Temperature TJ: 200℃; (6)CW Operation CW: 190W.
Features
mrf6p27160h features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)Low Gold Plating Thickness on Leads, 40μ Nominal; (8)Pb-Free and RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6P27160HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2700MHZ 35W NI1230H |
Data Sheet |
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MRF6P27160HR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2700MHZ 35W NI1230H |
Data Sheet |
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